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G11N120CN View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
G11N120CN
Fairchild
Fairchild Semiconductor Fairchild
G11N120CN Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
4
FREQUENCY = 1MHz
3
CIES
2
15
DUTY CYCLE < 0.5%, TC = 110oC
250µs PULSE TEST
12
VGE = 15V
9
VGE = 10V
6
1
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3
0
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG11N120CND
RG = 10
L = 2mH
+
-
VDD = 960V
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 19. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B
 

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