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FX70SMJ-03 View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
FX70SMJ-03 High-Speed Switching Use Pch Power MOS FET Renesas
Renesas Electronics Renesas
FX70SMJ-03 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
FX70SMJ-03
Transfer Characteristics (Typical)
–100
–80
Tc = 25°C
VDS = –10V
Pulse Test
–60
–40
–20
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
105
7
Tch = 25°C
f = 1MHz
5 VGS = 0V
3
2
104
7
5
3
2
103
7
5
3
2
–3
–5 –7 –100
Ciss
Coss
Crss
–2 –3 –5 –7 –101 –2 –3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –70A
–8
VDS = –10V
–6
–20V
–25V
–4
–2
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = –10V
5 Pulse Test
4
3
2
101
7
5
4
3
2
TC = 125°C
75°C
25°C
10–0100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
Drain Current ID (A)
Switching Characteristics (Typical)
103
td(off)
7
5
tf
4
3
2
tr
102
td(on)
7
5
4
3
Tch = 25°C
2
VGS = –10V
VDD = –15V
RGEN = RGS = 50
101
–5
–7
–100
–2
–3
–5–7 –101 –2 –3
–5–7 –102 –2 –3
–5
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
–100
–80
VGS = 0V
Pulse Test
–60
–40
TC = 25°C
75°C
125°C
–20
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
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