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FX70SMJ-03 View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
FX70SMJ-03 High-Speed Switching Use Pch Power MOS FET Renesas
Renesas Electronics Renesas
FX70SMJ-03 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
FX70SMJ-03
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min
–30
–1.3
Typ
–1.8
10.0
19
–0.35
55.8
11140
2300
1000
85
228
751
360
–1.0
70
Max
±0.1
0.1
–2.3
12.3
25
–0.43
–1.5
0.83
Unit
V
µA
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –35 A, VGS = –10 V
ID = –26 A, VGS = –4 V
ID = –35 A, VGS = –10 V
ID = –35 A, VDS = –10 V
VDS = –10 V, VGS = 0 V,
f = 1MHz
VDD = –15 V, ID = –35 A,
VGS = –10 V,
RGEN = RGS = 50
IS = –35 A, VGS = 0 V
Channel to case
IS = –35 A, dis/dt = 50 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
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