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FQPF4N60 View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name
Description
View to exact match
FQPF4N60
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
FQPF4N60 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
April 2000
FQPF4N60
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
• 2.6A, 600V, RDS(on) = 2.2@VGS = 10 V
• Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
GD S
TO-220F
FQPF Series
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQFP4N60
600
2.6
1.64
10.4
±30
260
2.6
3.6
4.5
36
0.29
-55 to +150
300
Typ
Max
--
3.47
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°CW
°CW
 

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