FQP50N06 View Datasheet(PDF) - Tiger Electronic
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Description
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FQP50N06 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
60V N-Channel MOSFET
Product specification
FQP50N06
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as
automotive, DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l
Value Unit
Drain-Source Voltage
VDSS
60
V
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
ID
IDM
VGSS
PD
Tj
Tstg
50
A
200 A
±25 V
120 W
150 oC
-55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS = 0V, ID =250μA
VDS =60V, VGS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS =25V, VDS =0V
VGS = -25V, VDS =0V
VDS = VGS , ID =250μA
VGS = 10 V, ID = 25 A
Forward Transconductance
Drain-Source Diode Forward Voltage
gFS VDS = 25 V, ID = 25 A
VSD VGS = 0 V, IS = 50 A
Min.
60
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—
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2.0
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Typ.
—
—
—
—
—
18
22
—
Max. Unit
—
V
1.0 uA
100 nA
-100 nA
4.0 V
22 mΩ
—
S
1.5 V
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