datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FQPF10N60C View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name
Description
View to exact match
FQPF10N60C
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
FQPF10N60C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
100
Notes :
1. 250μ s Pulse Test
2. TC = 25
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
VGS = 10V
1.0
0.5
VGS = 20V
0.0
0
Note : TJ = 25
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
C
oss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
C =C
rss gd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0μ=s40PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
V = 300V
DS
V = 480V
8
DS
6
4
2
Note : ID = 9.5A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]