FDN5630 View Datasheet(PDF) - KEXIN Industrial

Part Name

Description

View to exact match

FDN5630

N-Channel PowerTrench MOSFET

KEXIN Industrial 

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

FDN5630

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-source Breakdown voltage

Breakdown Voltage Temperature Coefficient

Symbol

V(BR)DSS

△V(BR)DSS/△TJ

Static drain-source on- resistance

RDS(on)

Gate threshold voltage

Forward Transconductance

Gate-source leakage current

Gate-source forward leadage

Gate-source reverse leadage

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Input capacitance

Output capacitance

Reverse transfer capacitance

Maximum Continuous Drain-Source Diode Forward Current

Diode forward voltage

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tr

Ciss

Coss

Crss

IS

VSD

Testconditons

ID= 250 μA, VGS = 0V

ID = 250μA, Referenced to 25℃

ID= 1.7A, VGS = 10V

ID= 1.7A, VGS = 10V Ta = 125℃

ID= 1.6A, VGS = 6V

VDS = VGS, ID= 250 μA

VDS = 10 V, ID = 1.7 A

VDS = 48 V, VGS = 0V

VGS =-20V

VGS =20V

VDS =20V ,VGS = 10 V ,

ID=1.7 A

VDD= 30 V, ID= 1 A

VGS =10 V, RGEN= 6 Ω

VDS = 15 V,

VGS = 0 V,

f= 1MHz

VGS = 0 V , IS = 0.42 A

Min Typ Max Unit

60

V

63

mV/℃

73 100

127 180 mΩ

83 120

1 2.4

3

V

6

S

1

μA

-100

nA

100

7

10

1.6

nC

1.2

10 20

6

15

ns

15 28

5

15

400

102

pF

21

0.42 A

0.72 1.2 V

2

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