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FDN335N View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
View to exact match
FDN335N
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
FDN335N Datasheet PDF : 4 Pages
1 2 3 4
20V N-Channel Enhancement Mode MOSFET
FDN335N
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
TJ = 150_C
TJ = 25_C
0.12
ID = 3.6 A
0.08
0.04
1
0.2
0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.2
0
0
14
2
4
6
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
0.1
12
–0.0
ID = 250 mA
–0.1
–0.2
–0.3
10
8
TC = 25_C
6
Single Pulse
4
2
–0.4
–50
2
0
50
100
150
0
0.01
0.10
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1.00
Time (sec)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
30
8
10.00
JinYu
semiconductor
www.htsemi.com
Date:2011/05
 

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