datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FDN335N View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
View to exact match
FDN335N
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
FDN335N Datasheet PDF : 4 Pages
1 2 3 4
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance 1)
BVDSS VGS = 0V, ID = 10uA
RDS(on)
VGS = 4.5V, ID = 1.7A
VGS = 2.5V, ID = 1.5A
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
VGS(th)
IDSS
VDS =VGS, ID = 50uA
VDS = 16V, V GS = 0V
Gate Body Leakage
Forward Transconductance 1)
Dynamic 1)
IGSS VGS = ± 8V, VDS = 0V
gfs
VDS = 5V, ID = 1.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS = 10V, I D = 3.6A
Qgs
VGS = 4.5V
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDD = 10V, RL=5.5
ID ^ 3.6A,V GEN = 4.5V
RG = 6
VDS = 10V, VGS = 0V
f = 1.0 MHz
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1.6A, V GS = 0V
1) Pulse test: pulse width <= 300us, duty cycle<= 2%
FDN335N
Min.
Typ.
Miax.
Unit
20
V
55
70
m
78
100
0.4
1.5
V
1
uA
±100
nA
7
S
5.4
10
0.65
nC
1.6
12
25
36
60
ns
34
60
10
25
340
115
pF
33
0.6
A
1.2
V
JinYu
semiconductor
www.htsemi.com
Date:2011/05
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]