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KDB4020P View Datasheet(PDF) - KEXIN Industrial

Part NameDescriptionManufacturer
KDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor Kexin
KEXIN Industrial Kexin
KDB4020P Datasheet PDF : 2 Pages
1 2
SMD Type
KDB4020P(FDB4020P)
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Drain to source on-state resistance
On-State Drain Current
Forward Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(on)
ID(on)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
tr
toff
tf
IS
Testconditons
ID=250ìA VGS=0V
VDS=-16V,VGS=0,TC=25
VGS= 8V,VGS=0V
VDS = VGS, ID = -250ìA
VGS=-4.5V,ID=-8A
VGS=-4.5V,ID=-8A,TJ=125
VGS=-2.5V,ID=-7A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -8 A
VDS=-10V,VGS=0,f=1MHZ
VDS = -5 V,
ID = -16 A, VGS = -4.5 V *
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ù*
ISM
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = -16 A *
* Pulse Test: Pulse Width 300 ìs, Duty Cycle 2.0%
MOSFET
Min Typ Max Unit
-20
V
-1
A
100 nA
-0.4 -0.58 -1
V
0.068 0.08
0.098 0.13 Ù
0.096 0.110
-20
A
14
S
665
pF
270
pF
70
pF
9.5 13 nC
1.3
nC
2.2
nC
8 16 ns
24 38 ns
50 80 ns
29 45 ns
-16 A
-48 A
-1.2 V
2 www.kexin.com.cn
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