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KDB4020P View Datasheet(PDF) - KEXIN Industrial

Part Name
Description
View to exact match
KDB4020P Datasheet PDF : 2 Pages
1 2
SMD Type
MOSFET
P-Channel 2.5V Specified Enhancement
Mode Field Effect Transistor
KDB4020P(FDB4020P)
Features
-16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V
RDS(on) = 0.11 Ù @ VGS = -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
High density cell design for extremely low RDS(on).
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current TC=25
Drain current-pulsed
Power dissipation
Derate above 25
Thermal Resistance, Junction-to- Case
Thermal Resistance Junction to Ambient
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Idp
PD
RèJC
RèJA
Tch
Tstg
Rating
-20
8
-16
-48
37.5
0.25
4
40
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
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