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KDB2670 View Datasheet(PDF) - TY Semiconductor

Part Name
Description
View to exact match
KDB2670
Twtysemi
TY Semiconductor Twtysemi
KDB2670 Datasheet PDF : 2 Pages
1 2
SMD Type
Features
19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Product specification
KDB2670(FDB2670)
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous
Drain current-Pulsed
Power dissipation
Derate above 25
Peak Diode Recovery dv/dt
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
dv/dt
RèJA
RèJC
Tch
Tstg
Rating
200
20
19
40
93
0.63
3.2
62.5
1.6
175
-65 to +175
Unit
V
V
A
A
W
W/
V/ns
/W
/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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