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FCD7N60TF View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FCD7N60TF
Fairchild
Fairchild Semiconductor Fairchild
FCD7N60TF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
FCD7N60 / FCU7N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.53
• Ultra low gate charge (typ. Qg=23nC)
• Low effective output capacitance (typ. Coss.eff=60pF)
• 100% avalanche tested
D
July 2006
SuperFETTM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GS
G
D-PAK
G D S I-PAK
FCD Series
FCU Series
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCD7N60/FCU7N60
600
7
4.4
21
± 30
230
7
8.3
20
83
0.67
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCD7N60/FCU7N60
1.5
83
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FCD7N60/FCU7N60 Rev. A0
www.fairchildsemi.com
 

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