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EGP30B(2016) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
EGP30B
(Rev.:2016)
Vishay
Vishay Semiconductors Vishay
EGP30B Datasheet PDF : 4 Pages
1 2 3 4
EGP30A, EGP30B, EGP30C, EGP30D, EGP30F, EGP30G
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT
Maximum instantaneous
forward voltage
3.0 A
VF
0.95
1.25
V
Maximum DC
reverse current at rated
DC blocking voltage
TA = 25 °C
IR
TA = 125 °C
5.0
μA
100
Maximum reverse
recovery time
Typical junction
capacitance
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
4.0 V, 1 MHz
CJ
50
85
ns
75
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT
Typical thermal resistance
RJA (1)
RJL (1)
20
°C/W
8.0
Note
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
EGP30G-E3/54
1.01
54
EGP30G-E3/73
1.01
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
2.0
1.0
0
0
25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Jun-16
2
Document Number: 88584
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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