EGP10A View Datasheet(PDF) - Unspecified
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EGP10A Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
EGP10A (Z)---EGP10G(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
PULSE
GENERATOR
(NOTE2)
(-)
NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50Ω.
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25
Pulse Width=300µS
1.0
50\100 \150 \200V
0.1
0.04
300\400V
0.010 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPICAL JUNCTION CAPACITANCE
t rr
+0.5A
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR20/30 ns/cm
FIG.4--TYPICAL REVERSE CHARACTERISTICS
1.0
0.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)LEAD LENGTH
0
0 25 50 75
100 125 150 175
NUMBER OF CYCLES AT 60Hz
FIG.6--FORWARD DERATING CURVE
35
30
TJ=25
25
20
15
10
5
EGP10A-EGP10D
EGP10F&EGP10G
0
0.1
1
4
10
100
REVERSE VOLTAGE,VOLTS
30
25
20
15
10
5
0
1
TJ=125
8.3m s Single H alf
Sine-W ave
E G P 10A -E G P 10G
10
100
AMBIENT TEMPERATURE,
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