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EGP10A View Datasheet(PDF) - Unspecified

Part Name
Description
View to exact match
EGP10A
ETC
Unspecified ETC
EGP10A Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea EGP10A(Z) --- EGP10G(Z)
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length
@TA=75
Peak forw ard surge current
VRRM 50
VRMS 35
VDC 50
IF(AV)
8.3ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.0 A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC.
3.Thermal resistance f rom junction to ambient.
EGP
10B
100
70
100
EGP
10C
150
105
150
EGP
10D
200
140
200
1.0
30.0
0.95
5.0
100.0
50
22
50
- 55 ---- + 150
- 55 ---- + 150
EGP
10F
300
210
300
EGP
10G
400
280
400
UNITS
V
V
V
A
A
1.25
V
A
ns
15
pF
/W
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