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CXT5401 View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
View to exact match
CXT5401
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
CXT5401 Datasheet PDF : 2 Pages
1 2
CXT5401
TRANSISTOR (PNP)
FEATURE
z Switching and amplification in high voltage
Applications such as telephony
z Low current(max. 500mA)
z High voltage(max.160v)
MAXIMUM RATINGS (TA=25unless otherwise noted)
SOT-89
1. BASE
1
1
2. COLLECTOR
22
3
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.5
0.5
150
-55-150
Units
V
V
V
A
W
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
NF
Test conditions
IC= -100μA, IE=0
IC = -1mA, IB=0
IE = -10μA, IC=0
VCB = -120 V, IE=0
VEB= -3V, IC=0
VCE= -5V, IC=-1 mA
VCE= -5V, IC= -10 mA
VCE= -5V, IC=-50 mA
IC= -10 mA, IB= -1 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
IC= -50 mA, IB= -5 mA
VCE= -10V, IC= -10mA,
f = 100MHz
VCB=-10V, IE= 0,f=1MHz
VCE= -5.0V, IC= -200μA,
RS= 10,f =10Hz to15.7kHz
MIN
TYP
-160
-150
-5
50
60
50
100
MAX
-50
-50
300
-0.2
-0.5
-1
-1
300
6
8
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
pF
dB
1 
JinYu
semiconductor
www.htsemi.com
Date:2011/05
 

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