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CXT3150 View Datasheet(PDF) - Central Semiconductor

Part NameDescriptionManufacturer
CXT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR Central-Semiconductor
Central Semiconductor Central-Semiconductor
CXT3150 Datasheet PDF : 2 Pages
1 2
CXT3150
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3150 type is
a NPN Silicon Power Transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high current, high gain,
fast switching applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
ΘJA
50
25
7.0
5.0
1.0
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=50V
IEBO
VEB=7.0V
BVCEO
IC=10mA
25
VCE(SAT)
IC=3.0A, IB=150mA
VCE(SAT)
IC=4.0A, IB=200mA
VBE(SAT)
IC=3.0A, IB=150mA
VBE(SAT)
IC=4.0A, IB=200mA
hFE
VBE=2.0V, IC=500mA
250
hFE
VCE=2.0V, IC=2.0A
150
hFE
VCE=2.0V, IC=5.0A
50
fT
VCE=6.0V, IC=50mA, f=200MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
1.0
1.0
0.5
0.6
1.10
1.40
550
50
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
MHz
pF
R6 (23-February 2010)
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