CXT3019 View Datasheet(PDF) - Central Semiconductor
Part Name
Description
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| CXT3019 Datasheet PDF : 0 Pages | |||
CXT3019
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3019 type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high current general purpose
amplifier applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
ΘJA
140
80
7.0
1.0
1.5
1.2
-65 to +175
125
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=90V
IEBO
VEB=5.0V
BVCBO
IC=100μA
140
BVCEO
IC=30mA
80
BVEBO
IE=100μA
7.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
hFE
VCE=10V, IC=0.1mA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=500mA
50
hFE
VCE=10V, IC=1.0A
15
fT
VCE=10V, IC=50mA, f=1.0MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
NF
VCE=10V, IC=100μA, RS=1.0kΩ,
f=1.0kHz
MAX
10
10
0.2
0.5
1.1
300
12
60
4.0
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
R7 (23-February 2010)
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