BZD27C3V6P View Datasheet(PDF) - Vaishali Semiconductor
Part Name
Description
View to exact match
BZD27C3V6P Datasheet PDF : 7 Pages
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BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
e3
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case
Weight: approx. 15 mg
17249
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
TL = 80 °C
Ptot
2.3
W
TA = 25 °C
Ptot
0.81)
W
Non-repetitive peak pulse power 100 µs square pulse2)
PZSM
300
W
dissipation
10/1000 µs waveform (BZD27-
PRSM
150
W
C7V5P to BZD27-C100P)2)
10/1000 µs waveform (BZD27-
PRSM
100
W
C110P to BZD27-C200P)2)
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
2) TJ = 25 °C prior to surge
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air1)
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
RthJA
180
K/W
RthJL
30
K/W
Tj
150
°C
TS
- 55 to + 150
°C
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.2 A
Document Number 85810
Rev. 1.8, 13-Apr-05
Symbol
Min
Typ.
Max
Unit
VF
1.2
V
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