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BUZ71 View Datasheet(PDF) - Comset Semiconductors

Part Name
Description
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BUZ71 Datasheet PDF : 3 Pages
1 2 3
SEMICONDUCTORS
BUZ71
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in switched mode power supplies,
motor control, welding,
DC-DC & DC-AC converters, and in general purpose
switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDS
IDS
IDM
IAR
EAS
EAR
VGS
RDS(on)
PT
tJ
tstg
Drain-Source Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Avalanche Current, Limited by Tjmax
Avalanche Energy, Single pulse
ID = 14 A, VDD = 25 V, RGS = 25 , L= 30.6 µH, Tj = 25°C
Avalanche Energy, Periodic Limited by Tjmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
Value
50
14
56
14
6
1
20
0.1
40
-55 to +150
-55 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
3.1
75
Unit
V
A
mJ
V
W
°C
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
 

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