BUZ305 View Datasheet(PDF) - Siemens AG

Part Name

Description

View to exact match

BUZ305

SIPMOS® Power Transistor

Siemens AG 

BUZ 305

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

G

Pin 2

D

Pin 3

S

Type

BUZ 305

VDS

800 V

ID

7.5 A

RDS(on)

1Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 31 °C

Pulsed drain current

TC = 25 °C

Avalanche current,limited by Tjmax

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

ID = 7.5 A, VDD = 50 V, RGS = 25 Ω

L = 27.7 mH, Tj = 25 °C

Gate source voltage

Power dissipation

TC = 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Package

TO-218 AA

Symbol

ID

IDpuls

IAR

EAR

EAS

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Ordering Code

C67078-S3134-A2

Values

Unit

A

7.5

30

7.5

16

mJ

830

± 20

V

W

150

-55 ... + 150 °C

-55 ... + 150

≤ 0.83

K/W

75

E

55 / 150 / 56

Semiconductor Group

1

01/97

Share Link: