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BUZ11 View Datasheet(PDF) - Intersil

Part NameDescriptionManufacturer
BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Intersil
Intersil Intersil
BUZ11 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Data Sheet
BUZ11
June 1999
File Number 2253.2
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ11
TO-220AB
BUZ11
NOTE: When ordering, use the entire part number.
Features
• 30A, 50V
• rDS(ON) = 0.040
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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