BUZ11 View Datasheet(PDF) - Intersil

Part Name

Description

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BUZ11

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

Intersil 

Data Sheet

BUZ11

June 1999

File Number 2253.2

30A, 50V, 0.040 Ohm, N-Channel Power

MOSFET

This is an N-Channel enhancement mode silicon gate power

field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Formerly developmental type TA9771.

Ordering Information

PART NUMBER

PACKAGE

BRAND

BUZ11

TO-220AB

BUZ11

NOTE: When ordering, use the entire part number.

Features

• 30A, 50V

• rDS(ON) = 0.040Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

4-5

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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