BUZ102SL-4 View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BUZ102SL-4 Datasheet PDF : 8 Pages
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SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 102SL-4
Type
VDS
BUZ 102SL-4 55 V
ID
6.2 A
RDS(on)
0.033 Ω
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 6.2 A, VDD = 25 V, RGS = 25 Ω
L = 12.7 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 6.2 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
Unit
A
6.2
24.8
mJ
245
kV/µs
6
± 14
V
W
2.4
-55 ... + 175 °C
-55 ... + 175
55 / 175 / 56
Semiconductor Group
1
23/Oct/1997
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