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BUZ101SL-4 View Datasheet(PDF) - Siemens AG

Part Name
Description
View to exact match
BUZ101SL-4
Siemens
Siemens AG Siemens
BUZ101SL-4 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Preliminary data
BUZ 101SL-4
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 4.1 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 5 V, ID = 4.1 A
RG = 9.8
Rise time
VDD = 30 V, VGS = 5 V, ID = 4.1 A
RG = 9.8
Turn-off delay time
VDD = 30 V, VGS = 5 V, ID = 4.1 A
RG = 9.8
Fall time
VDD = 30 V, VGS = 5 V, ID = 4.1 A
RG = 9.8
Gate charge at threshold
VDD = 40 V, ID 0.1 A, VGS =0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 4.1 A, VGS =0 to 5 V
Gate charge total
VDD = 40 V, ID = 4.1 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 4.1 A
gfs
5
Ciss
-
Coss
-
Crss
-
td(on)
-
tr
-
td(off)
-
tf
-
Qg(th)
-
Qg(5)
-
Qg(total)
-
V(plateau)
-
Semiconductor Group
3
S
-
-
pF
560
700
170
215
95
120
ns
20
30
35
55
40
60
27
40
nC
1.4
2.1
15
22
24
36
V
2.98 -
02/Oct/1997
 

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