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BUZ101SL-4 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ101SL-4 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ101SL-4 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 101SL-4
Type
VDS
BUZ 101SL-4 55 V
ID
4.1 A
RDS(on)
0.075
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 4.1 A, VDD = 25 V, RGS = 25
L = 10.7 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
Unit
A
4.1
16.4
mJ
90
kV/µs
6
± 14
V
W
2.4
-55 ... + 175 °C
-55 ... + 175
55 / 175 / 56
Semiconductor Group
1
02/Oct/1997
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