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BU209 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
BU209
Iscsemi
Inchange Semiconductor Iscsemi
BU209 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU209
DESCRIPTION
·High Reverse Voltage
·High Peak Power
·Collector Current- IC = 4A
APPLICATIONS
·Designed for use in horizontal deflection circuits in color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1700
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7.5
A
IBB
Base Current-Continuous
2.5
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC95
TJ
Junction Temperature
Tstg
Storage Temperature
4
A
12.5
W
115
-65~115
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.6 /W
isc Websitewww.iscsemi.cn
 

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