Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU126
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For voltage regulator ,inverter,switching
mode power supply applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
·
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
750
300
3.0
6.0
2.0
40
125
-65~125
UNIT
V
V
A
A
A
W
℃
℃
MAX
2.5
UNIT
K/W