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BTB12-600TW3G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
BTB12-600TW3G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BTB12-600TW3G Datasheet PDF : 6 Pages
1 2 3 4 5 6
BTB12600TW3G
100
VD = 12 V
RL = 30 W
10
Q2
Q3
Q1
1
40 25 10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current Variation
2
1.8
VD = 12 V
RL = 30 W
1.6
1.4
1.2
Q1
1
0.8
Q3
0.6 Q2
0.4
0.2
0
40 25 10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage Variation
100
VD = 12 V
RL = 30 W
Q2
10
Q1
Q3
1
40 25 10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Latching Current Variation
5000
VD = 600 Vpk
4K
TJ = 110°C
3K
2K
1K
0
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 9. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
MT1
G
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
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