BTB12-600TW3G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
View to exact match
BTB12-600TW3G Datasheet PDF : 6 Pages
| |||
BTB12−600TW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
1.8
60
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
IDRM/
TJ = 25°C
IRRM
−
−
TJ = 110°C
−
−
Peak On-State Voltage (Note 2)
(ITM = ± 17 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VTM
−
−
IGT
1.2
−
1.2
−
1.2
−
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 12 V, IG = 7.5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IH
−
−
IL
−
−
−
−
−
−
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.5
−
0.5
−
0.5
−
Gate Non−Trigger Voltage (TJ = 110°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
0.2
−
0.2
−
0.2
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 110°C, No Snubber)
Critical Rate of Rise of On−State Current
(TJ = 110°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
(dI/dt)c
1.75
−
dI/dt
−
−
dV/dt
10
−
Max Unit
mA
0.005
1.0
1.55
V
mA
5.0
5.0
5.0
10
mA
mA
15
15
15
V
1.3
1.3
1.3
V
−
−
−
−
A/ms
45
A/ms
−
V/ms
http://onsemi.com
2
|
|
Share Link: 