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BT169BG-T92-B View Datasheet(PDF) - Unisonic Technologies

Part NameBT169BG-T92-B UTC
Unisonic Technologies UTC
DescriptionSCRS
BT169BG-T92-B Datasheet PDF : 6 Pages
1 2 3 4 5 6
BT169
SCR
„ QUICK REFERENCE DATA
PARAMETER
SYMBOL
Repetitive Peak Off-State Voltages
Average On-State Current
RMS On-State Current
Non-Repetitive Peak On-State Current
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
„ ABSOLUTE MAXIMUM RATINGS
BT169B
MAX
200
0.5
0.8
8
BT169D
MAX
400
0.5
0.8
8
BT169E
MAX
500
0.5
0.8
8
BT169G
MAX
600
0.5
0.8
8
BT169H
MAX
800
0.5
0.8
8
UNIT
MAX
V
A
A
A
PARAMETER
SYMBOL
RATINGS
UNIT
BT169B
200
BT169D
400
Repetitive Peak Off-State Voltages(Note 2) BT169E VDRM,VRRM
500
V
BT169G
600
BT169H
800
Peak Gate Voltage
VGM
5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Gate Current
IGM
1
A
Average On-State Current
(Half Sine Wave, TLEAD83°C)
IT(AV)
0.5
A
RMS On-State Current (All Conduction Angles)
IT(RMS)
0.8
A
Non-Repetitive Peak On-State Current t=10ms
(Half Sine Wave, TJ=25°C Prior to Surge) t=8.3ms
ITSM
I2t For Fusing (t=10ms)
I2t
8
A
9
A
0.32
A2S
Repetitive Rate of Rise of On-State Current After
Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/μs)
dIT/dt
50
A/μs
Peak Gate Power
PGM
2
W
Average Gate Power (Over any 20 ms period)
PG(AV)
0.1
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
„ THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient (typ.)
Note: pcb mounted, lead length=4mm
SYMBOL
θJA
RATINGS
150
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C /W
PARAMETER
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
SYMBOL
TSET CONDITIONS
MIN TYP MAX UNIT
IGT VD=12V, IT=10 mA, gate open circuit 25
55 μA
IL
VD=12V, IGT=0.5mA, RGK=1kΩ
2
6 mA
IH
VD=12V,IGT=0.5mA, RGK=1kΩ
2
5 mA
VT
IT=1A
1.2 1.35 V
VD=12V, IT=10mA, gate open circuit
VGT VD=VDRM(MAX), IT=10mA, TJ=125°C,
0.2
0.5
0.3
0.8
V
gate open circuit
ID,IR
VD=VDRM(MAX), VR=VRRM(MA\X),
TJ=125°C, RGK=1kΩ
0.05 0.1 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R301-015,C
Direct download click here
 

DESCRIPTION
Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 

 

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