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BT169BG-T92-B View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
BT169BG-T92-B SCRS UTC
Unisonic Technologies UTC
BT169BG-T92-B Datasheet PDF : 6 Pages
1 2 3 4 5 6
BT169
SCR
„ QUICK REFERENCE DATA
PARAMETER
SYMBOL
Repetitive Peak Off-State Voltages
Average On-State Current
RMS On-State Current
Non-Repetitive Peak On-State Current
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
„ ABSOLUTE MAXIMUM RATINGS
BT169B
MAX
200
0.5
0.8
8
BT169D
MAX
400
0.5
0.8
8
BT169E
MAX
500
0.5
0.8
8
BT169G
MAX
600
0.5
0.8
8
BT169H
MAX
800
0.5
0.8
8
UNIT
MAX
V
A
A
A
PARAMETER
SYMBOL
RATINGS
UNIT
BT169B
200
BT169D
400
Repetitive Peak Off-State Voltages(Note 2) BT169E VDRM,VRRM
500
V
BT169G
600
BT169H
800
Peak Gate Voltage
VGM
5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Gate Current
IGM
1
A
Average On-State Current
(Half Sine Wave, TLEAD83°C)
IT(AV)
0.5
A
RMS On-State Current (All Conduction Angles)
IT(RMS)
0.8
A
Non-Repetitive Peak On-State Current t=10ms
(Half Sine Wave, TJ=25°C Prior to Surge) t=8.3ms
ITSM
I2t For Fusing (t=10ms)
I2t
8
A
9
A
0.32
A2S
Repetitive Rate of Rise of On-State Current After
Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/μs)
dIT/dt
50
A/μs
Peak Gate Power
PGM
2
W
Average Gate Power (Over any 20 ms period)
PG(AV)
0.1
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
„ THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient (typ.)
Note: pcb mounted, lead length=4mm
SYMBOL
θJA
RATINGS
150
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C /W
PARAMETER
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
SYMBOL
TSET CONDITIONS
MIN TYP MAX UNIT
IGT VD=12V, IT=10 mA, gate open circuit 25
55 μA
IL
VD=12V, IGT=0.5mA, RGK=1kΩ
2
6 mA
IH
VD=12V,IGT=0.5mA, RGK=1kΩ
2
5 mA
VT
IT=1A
1.2 1.35 V
VD=12V, IT=10mA, gate open circuit
VGT VD=VDRM(MAX), IT=10mA, TJ=125°C,
0.2
0.5
0.3
0.8
V
gate open circuit
ID,IR
VD=VDRM(MAX), VR=VRRM(MA\X),
TJ=125°C, RGK=1kΩ
0.05 0.1 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R301-015,C
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