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BT137-600E View Datasheet(PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

Part Name
Description
View to exact match
BT137-600E
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd LUGUANG
BT137-600E Datasheet PDF : 5 Pages
1 2 3 4 5
BT137-600E
Sensitive Gate Triacs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
Repetitive peak off-state
Voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive surge
peak on-statecurrent
I2t
I2t for fusing
dIT/dt
Repetitive rate of rise of
on-state current after
triggering
IGM
VGM
PGM
P G(AV)
Tstg
Tj
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature
CONDITIONS
Full sine wave;Tmb 102
full sine wave;,
Tj =25
prior to surge
T=10ms
I = TM 12A; IG=0.2A;
DIG/dt=0.2A/ s
Over any 20 ms period
t=20ms
t=16.7ms
T2+G+
T2+G-
T2-G-
T2-G+
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Value
600
8
65
71
21
UNIT
V
A
A
A
A2S
50
A/ s
50
A/ s
50
A/ s
10
A/ s
2
A
5
V
5
W
0.5
W
150
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT1
Gate trigger current
VD=12V; IT=0.1A
IL
Latching current
VD=12V; I = GT 0.1A
IH
Holding current
VD=12V; I = GT 0.1A
VT
On-state voltage
IT=10A
VGT
Gate trigger voltage
VD=12V;IT=0.1A
VD=400V;IT=0.1A;TJ=125
ID
Off-state leakage current VD=V ; DRM(max) TJ=125
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Dynamic Characteristics
dVD/dt
tgt
Critical rate of rise of
Off-state voltage
Gate controlled turn-on
time
V = DM 67% VDRM(ma ;x) Tj=125 ;
Exponential wave form;gate open circuit
I = TM 12A;VD=V ;I DRM(max) G=0.1A;
DlG/dt=5A/ s
MIN
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
TYP MAX UNIT
2.5
10
mA
4.0
10
mA
5.0
10
mA
11
25
mA
3.0
25
mA
14
35
mA
3.0
25
mA
4.0
35
mA
2.5
20
mA
1.3 1.65
V
0.7
1.5
V
0.4
-
V
0.1
0.5
mA
50
-
V/ s
2
-
s
http://www.luguang.cn
mail:lge@luguang.cn
 

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