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BCX41 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BCX41 NPN Silicon AF and Switching Transistor Siemens
Siemens AG Siemens
BCX41 Datasheet PDF : 4 Pages
1 2 3 4
BCX 41
BSS 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
IC = 10 mA
BSS 64
80
BCX 41
125 –
Collector-base breakdown voltage1)
V(BR)CB0
IC = 100 µA
BSS 64
120 –
BCX 41
125 –
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0 5
Collector cutoff current
VCB = 80 V
VCB = 100 V
VCB = 80 V, TA = 150 ˚C
VCB = 100 V, TA = 150 ˚C
ICB0
BSS 64
100
BCX 41
100
BSS 64
20
BCX 41
20
Collector cutoff current
VCE = 100 V
TA = 85 ˚C
TA = 125 ˚C
ICE0
BCX 41
BCX 41
10
75
Emitter cutoff current
VEB = 4 V
IEB0
100
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 4 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 20 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
hFE
BCX 41
BSS 64
BSS 64
BSS 64
BSS 64
BCX 41
BCX 41
25
60 –
20
80
80 –
55 –
63
40
Collector-emitter saturation voltage1)
VCEsat
IC = 300 mA, IB = 30 mA
BCX 41
0.9
IC = 4 mA, IB = 0.4 mA
BSS 64
0.7
IC = 50 mA, IB = 15 mA
BSS 64
3.0
Base-emitter saturation voltage1)
VBEsat
1.4
IC = 300 mA, IB = 30 mA
BCX 41
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
100 –
Output capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t 300 µs, D = 2 %
Cobo
12 –
Unit
V
nA
nA
µA
µA
µA
nA
V
MHz
pF
Semiconductor Group
2
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