BCX 41
BSS 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
IC = 10 mA
BSS 64
80
–
–
BCX 41
125 –
–
Collector-base breakdown voltage1)
V(BR)CB0
IC = 100 µA
BSS 64
120 –
–
BCX 41
125 –
–
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0 5
–
–
Collector cutoff current
VCB = 80 V
VCB = 100 V
VCB = 80 V, TA = 150 ˚C
VCB = 100 V, TA = 150 ˚C
ICB0
BSS 64
–
–
100
BCX 41
–
–
100
BSS 64
–
–
20
BCX 41
–
–
20
Collector cutoff current
VCE = 100 V
TA = 85 ˚C
TA = 125 ˚C
ICE0
BCX 41
BCX 41
–
–
10
–
–
75
Emitter cutoff current
VEB = 4 V
IEB0
–
–
100
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 4 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 20 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
hFE
BCX 41
BSS 64
BSS 64
BSS 64
BSS 64
BCX 41
BCX 41
25
–
–
–
60 –
20
80
–
–
80 –
–
55 –
63
–
–
40
–
–
Collector-emitter saturation voltage1)
VCEsat
IC = 300 mA, IB = 30 mA
BCX 41
–
–
0.9
IC = 4 mA, IB = 0.4 mA
BSS 64
–
–
0.7
IC = 50 mA, IB = 15 mA
BSS 64
–
–
3.0
Base-emitter saturation voltage1)
VBEsat
–
–
1.4
IC = 300 mA, IB = 30 mA
BCX 41
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
–
100 –
Output capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t ≤ 300 µs, D = 2 %
Cobo
–
12 –
Unit
V
nA
nA
µA
µA
µA
nA
–
V
MHz
pF
Semiconductor Group
2