BSP33 View Datasheet(PDF) - Zetex => Diodes
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BSP33 Datasheet PDF : 1 Pages
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
BSP31
BSP33
COMPLEMENTARY TYPE BSP31 BSP41
BSP33 BSP43
C
PARTMARKING DETAIL Device type in full
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSP31
BSP33
UNIT
Collector-Base Voltage
VCBO
-70
-90
V
Collector-Emitter Voltage
VCEO
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
PTOT
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSP31 V(BR)CBO -70
Breakdown Voltage BSP33
-90
Collector-Emitter BSP31 V(BR)CEO -60
Breakdown Voltage BSP33
-80
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IC=-100µA
V
IC=-100µA
V
IC=-10mA
IC=-10mA
V
IE=-10µA
Collector Cut-Off Current ICBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
Static Forward Current
hFE
30
Transfer Ratio
100
50
Collector Capacitance
Cc
Emitter Capacitance
Ce
Transition Frequency
fT
100
-100
-50
-0.25
-0.5
-1.0
-1.2
300
20
120
nA
µA
V
V
V
V
pF
pF
MHz
VCB=-60V
VCB=-60V, Tamb=125°C
IC =-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC =-100µA, VCE=-5V
IC =-100mA, VCE =-5V
IC =-500mA, VCE =-5V
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton
Turn-Off Time
Toff
500
ns
650
ns
VCC=-20V, IC=-100mA
IB1 =-IB2 =-5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 62
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