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BFR90-2008 View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
BFR90(2008) Silicon NPN Planar RF Transistor Vishay
Vishay Semiconductors Vishay
BFR90 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BFR90
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 20 V, VBE = 0
Collector-base cut-off current VCB = 20 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
μA
ICBO
100
nA
IEBO
10
μA
V(BR)CEO
15
V
hFE
25
50
150
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 10 V, IC = 14 mA,
fT
f = 500 MHz
5
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.35
pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz
Cce
0.3
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.3
pF
Noise figure
VCE = 10 V, IC = 2 mA,
F
f = 500 MHz, ZS = 50 Ω
2.2
dB
Power gain
VCE = 10 V, IC = 14 mA,
Gpe
19.5
dB
ZL = ZLopt, f = 500 MHz
VCE = 10 V, IC = 14 mA,
Gpe
14
dB
ZL = ZLopt, f = 800 MHz
Linear output voltage - two tone VCE = 10 V, IC = 14 mA,
V1 = V2
100
mV
intermodulation test
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
VCE = 10 V, IC = 14 mA,
IP3
f = 800 MHz
23
dBm
www.vishay.com
2
Document Number 85028
Rev. 1.5, 08-Sep-08
Direct download click here

 

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