BFR90(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

BFR90
(Rev.:2008)

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

BFR90

Vishay Semiconductors

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Collector-emitter cut-off current VCE = 20 V, VBE = 0

Collector-base cut-off current VCB = 20 V, IE = 0

Emitter-base cut-off current

VEB = 2 V, IC = 0

Collector-emitter breakdown

voltage

IC = 1 mA, IB = 0

DC forward current transfer ratio VCE = 10 V, IC = 14 mA

Symbol

Min

Typ.

Max

Unit

ICES

100

μA

ICBO

100

nA

IEBO

10

μA

V(BR)CEO

15

V

hFE

25

50

150

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 10 V, IC = 14 mA,

fT

f = 500 MHz

5

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.35

pF

Collector-emitter capacitance VCE = 10 V, f = 1 MHz

Cce

0.3

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

1.3

pF

Noise figure

VCE = 10 V, IC = 2 mA,

F

f = 500 MHz, ZS = 50 Ω

2.2

dB

Power gain

VCE = 10 V, IC = 14 mA,

Gpe

19.5

dB

ZL = ZLopt, f = 500 MHz

VCE = 10 V, IC = 14 mA,

Gpe

14

dB

ZL = ZLopt, f = 800 MHz

Linear output voltage - two tone VCE = 10 V, IC = 14 mA,

V1 = V2

100

mV

intermodulation test

dIM = 60 dB, f1 = 806 MHz,

f2 = 810 MHz, ZS = ZL = 50 Ω

Third order intercept point

VCE = 10 V, IC = 14 mA,

IP3

f = 800 MHz

23

dBm

www.vishay.com

2

Document Number 85028

Rev. 1.5, 08-Sep-08

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