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BDX53A View Datasheet(PDF) - Power Innovations Ltd

Part NameDescriptionManufacturer
BDX53A NPN SILICON POWER DARLINGTONS TRANSISTORS POINN
Power Innovations Ltd POINN
BDX53A Datasheet PDF : 6 Pages
1 2 3 4 5 6
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDX53
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 100 mA IB = 0
(see Note 3)
BDX53A
60
BDX53B
80
BDX53C
100
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
Emitter cut-off
current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
BDX53
0.5
BDX53A
0.5
BDX53B
0.5
BDX53C
0.5
BDX53
0.2
BDX53A
0.2
BDX53B
0.2
BDX53C
0.2
2
Forward current
hFE
transfer ratio
VCE = 3 V
IC = 3 A
(see Notes 3 and 4)
750
Base-emitter
VBE(sat) saturation voltage
IB = 12 mA IC = 3 A
(see Notes 3 and 4)
2.5
Collector-emitter
VCE(sat) saturation voltage
IB = 12 mA IC = 3 A
(see Notes 3 and 4)
2
Parallel diode
VEC forward voltage
IE = 3 A
IB = 0
2.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton
Turn-on time
toff
Turn-off time
IC = 3 A
VBE(off) = -4.5 V
IB(on) = 12 mA
RL = 10
IB(off) = -12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
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