BDS10 View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
View to exact match
BDS10
Semelab - > TT Electronics plc
BDS10 Datasheet PDF : 2 Pages
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BDS10
BDS11
BDS12
BDS10SMD
BDS11SMD
BDS12SMD
BDS10SMD05
BDS11SMD05
BDS12SMD05
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
BDS10
BDS11
BDS12
VCB = 60V
VCB = 80V
VCB = 100V
Collector cut-off current
(IB = 0)
BDS10
BDS11
BDS12
VCE = 30V
VCE = 40V
VCE = 50V
Emitter cut-off current
(IC = 0)
VEB = 5V
BDS10
Collector - Emitter
BDS11
sustaining voltage (IB = 0) BDS12
IC = 100mA
Min.
60
80
100
Typ.
VCE(sat)*
VBE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
IC = 5A
IC = 10A
IC = 10A
IB = 0.5A
IB = 2.5A
IB = 2.5A
VBE*
hFE*
fT
Base - Emitter voltage IC = 5A VCE = 4V
IC = 0.5A VCE = 4V
40
DC Current Gain
IC = 5A VCE = 4V
15
IC = 10A VCE = 4V
5
Transition frequency
IC = 0.5A VCE = 4V
3
f = 1MHz
*Pulsed : Pulse duration = 300 µs , duty cycle = 1.5%
Max.
500
500
500
1.0
1.0
1.0
Unit
µA
mA
1.0 mA
V
1.0
V
3
2.5 V
1.5 V
250
150
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts
Storage Time
tr
Fall Time
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = –IB2 = 0.4A
Max.
0.7
1.0
0.8
Unit
µs
µs
µs
THERMAL CHARACTERISTICS
Test Conditions
RθJ-C
Thermal Resistance Junction to Case
Max.
4.0
Unit
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3254
Issue 3
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