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BDS10SMD-2000 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part NameDescriptionManufacturer
BDS10SMD(2000) SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES Semelab
Semelab - > TT Electronics plc  Semelab
BDS10SMD Datasheet PDF : 2 Pages
1 2
SEME
LAB
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
BDS10
BDS11
BDS12
VCB = 60V
VCB = 80V
VCB = 100V
Collector cut-off current
(IB = 0)
BDS10
BDS11
BDS12
VCE = 30V
VCE = 40V
VCE = 50V
Emitter cut-off current
(IC = 0)
VEB = 5V
BDS10
Collector - Emitter
BDS11
sustaining voltage (IB = 0) BDS12
IC = 100mA
Min.
60
80
100
Typ.
VCE(sat)*
VBE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
IC = 5A
IC = 10A
IC = 10A
IB = 0.5A
IB = 2.5A
IB = 2.5A
VBE*
Base - Emitter voltage IC = 5A VCE = 4V
IC = 0.5A VCE = 4V
40
hFE*
DC Current gain
IC = 5A VCE = 4V
15
IC = 10A VCE = 4V
5
fT
Transition frequency
IC = 0.5A VCE = 4V
3
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
Max.
500
500
500
1
1
1
Unit
mA
mA
1 mA
V
1
V
3
2.5 V
1.5 V
250
150
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts
Storage Time
tr
Fall Time
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = IB2 = 0.4A
Max.
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
RTHcase-sink Thermal resistance case - heatsink **
RTHj-a
Thermal resistance junction - ambient
** Smooth flat surface using thermal grease.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
Prelim. 7/00
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