BD142 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
BD142 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD142
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High dissipation rating
APPLICATIONS
·LF large signal power amplification
·Intended for a wide variety of intermediate
power applications.
·Suited for use in audio and inverter circuits
at 12V
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
45
45
7
15
7
117
-65~200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.5
UNIT
℃/W
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