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BCW60FN View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BCW60FN NPN Silicon AF Transistors Infineon
Infineon Technologies Infineon
BCW60FN Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
VCEsat
V
- 0.12 0.25
-
0.2 0.55
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
VBEsat
-
0.7 0.85
- 0.83 1.05
Base-emitter voltage 1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
IC = 50 mA, VCE = 1 V
VBE(ON)
-
0.55
-
0.52
0.65
0.78
-
0.75
-
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
fT
Ccb
Ceb
hFE-grp. h11e
A/G
B/H
C / J / FF
D / K / FN
-
250
- MHz
-
3
- pF
-
8
-
k
-
2.7
-
-
3.6
-
-
4.5
-
-
7.5
-
Open-circuit reverse voltage transf.ratio | hFE-grp. h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
B/H
C / J/FF
D / K / FN
10-4
-
1.5
-
-
2
-
-
2
-
-
3
-
1) Pulse test: t =300µs, D = 2%
4
Jan-29-2002
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