BCX38B View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name

Description

View to exact match

BCX38B

Si-Epitaxial Planar Darlington-Transistors

Diotec Semiconductor Germany  

BCX38B

BCX38B

NPN

Si-Epitaxial Planar Darlington-Transistors

Si-Epitaxial Planar Darlington-Transistoren

Version 2006-07-24

Power dissipation

Verlustleistung

Plastic case

E BC

Kunststoffgehäuse

Weight approx. – Gewicht ca.

2 x 2.54

Dimensions - Maße [mm]

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

NPN

625 mW

TO-92

(10D3)

0.18 g

Maximum ratings (TA = 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO

Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO

Emitter-Base-voltage – Emitter-Basis-Spannung

C open VEBO

Power dissipation – Verlustleistung

Ptot

Collector current – Kollektorstrom (dc)

IC

Peak Collector current – Kollektor-Spitzenstrom

ICM

Junction temperature – Sperrschichttemperatur

Tj

Storage temperature – Lagerungstemperatur

TS

Grenzwerte (TA = 25°C)

BCX38B

60 V

80 V

10 V

625 mW 1)

800 mA

2A

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

DC current gain – Kollektor-Basis-Stromverhältnis 2)

IC = 100 mA, VCE = 5 V

hFE

IC = 500 mA, VCE = 5 V

hFE

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 800 mA, IB = 8 mA

VCEsat

Base-Emitter voltage – Basis-Emitter-Spannung 2)

IC = 800 mA, VCE = 5 V

VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 60 V, (E open)

ICBO

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 8 V, (C open)

IEB0

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

2000

–

–

4000

–

–

–

–

1.25 V

–

–

1.8 V

–

–

100 nA

–

–

100 nA

1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

© Diotec Semiconductor AG

http://www.diotec.com/

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