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BCX17 View Datasheet(PDF) - Diotec Semiconductor Germany

Part NameDescriptionManufacturer
BCX17 Surface mount Si-Epitaxial PlanarTransistors Diotec
Diotec Semiconductor Germany  Diotec
BCX17 Datasheet PDF : 2 Pages
1 2
General Purpose Transistors
BCX 17, BCX 18
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 1 V, - IC = 100 mA
hFE
- VCE = 1 V, - IC = 300 mA
hFE
- VCE = 1 V, - IC = 500 mA
hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 1 V, - IC = 500 mA
Gain-Bandwidth Product – Transitfrequenz
- VBEon
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
100
600
70
40
1.2 V
80 MHz
9 pF
RthA
420 K/W 2)
BCX 19, BCX 20
Marking – Stempelung
BCX 17 = T1
BCX 18 = T2
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
53
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