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BCW61C View Datasheet(PDF) - Central Semiconductor

Part NameDescriptionManufacturer
BCW61C SURFACE MOUNT PNP SILICON TRANSISTOR Central-Semiconductor
Central Semiconductor Central-Semiconductor
BCW61C Datasheet PDF : 2 Pages
1 2
BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW61B
Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low level, low noise applications.
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCEO
VCBO
VEBO
IC
PD
TJ,Tstg
ΘJA
32
32
5.0
100
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
ICES
ICES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
Cob
NF
ton
ton
TEST CONDITIONS
MIN
VCE=32V
VCE=32V, TA=150°C
IC=2.0mA
32
IE=1.0µA
5.0
IC=10mA, IB=250µA
IC=50mA, IB=1.25mA
IC=10mA, IB=250µA
0.60
IC=50mA, IB=1.25mA
0.68
VCE=5.0V, IC=2.0mA
0.60
VCB=10V, IC=0, f=1.0MHz
VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz
VCC=10V, IC=10mA, RL=990, IB1=IB2=1.0mA
VCC=10V, IC=10mA, RL=990, IB1=IB2=1.0mA
MAX
20
20
0.25
0.55
0.85
1.05
0.75
6.0
6.0 dB
150
800
hFE VCE=5.0V, IC=10µA
hFE VCE=5.0V, IC=2.0mA
hFE VCE=1.0V, IC=50mA
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz
BCW61B
MIN MAX
30
140 310
80
175 350
BCW61C
MIN MAX
40
250 460
100
250 500
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
µA
V
V
V
V
V
V
V
pF
ns
ns
BCW61D
MIN MAX
100
380 630
100
350 700
R1 (20-February 2003)
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