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BCW61C View Datasheet(PDF) -

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Description
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BCW61C
 
BCW61C Datasheet PDF : 0 Pages
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
DC Current Gain
at VCE = 5 V, IC = 10 µA
at VCE = 5 V, IC = 10 µA
at VCE = 5 V, IC = 10 µA
at VCE = 5 V, IC = 10 µA
BCW61A
hFE
BCW61B
hFE
30
BCW61C
hFE
40
BCW61D
hFE
100
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 2 mA
BCW61A
hFE
120
BCW61B
hFE
180
BCW61C
hFE
250
BCW61D
hFE
380
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 50 mA
BCW61A
hFE
60
BCW61B
hFE
80
BCW61C
hFE
100
BCW61D
hFE
110
Collector-Emitter Saturation Voltage
at IC = 10 mA, IB = 0.25 mA
at IC = 50 mA, IB = 1.25 mA
VCEsat
60
VCEsat
120
Base-Emitter Saturation Voltage
at IC = 10 mA, IB = 0.25 mA
at IC = 50 mA, IB = 1.25 mA
VBEsat
600
VBEsat
680
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 µA
at VCE = 1 V, IC = 50 mA
VBE
600
650
VBE
550
VBE
720
Collector-Emiter Cut-off Current
at VCE = 32 V, VEB=0
at VCE = 32 V, VEB=0, TA = 150°C
ICES
Emitter-Base Cut-off Current
at VEB = 4 V, IC=0
IEBO
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHZ, IE=0
CCBO
4.5
Emitter-Base Capacitance
at VEB = 0.5 V, f = 1 MHZ, IC=0
CEBO
11
Noise Figure
at VCE = 5 V, IC = 200 µA, RS = 2 k, f = 100 kHZ, B = 200Hz
F
2
Small Signal Current Gain
BCW60A
at VCE = 5V, IC = 2 mA, f = 1.0 kHZ
BCW60B
hfe
BCW60C
BCW60D
200
260
330
520
Turn-on Time at RL = 990(see fig. 1)
VCC = 10V, Ic = 10mA, IB(on) = IB(off) = 1mA
ton
85
Turn-off Time at RL = 990(see fig. 1)
VCC = 10V, Ic = 10mA, IB(on) = IB(off) = 1mA
toff
480
Max.
220
310
460
630
250
550
850
1050
750
20
20
20
6
150
800
Unit
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
MHz
pF
pF
dB
ns
ns
www.vishay.com
2
Document Number 88171
09-May-02
 

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