BCP5610T1 View Datasheet(PDF) - ON Semiconductor
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BCP5610T1 Datasheet PDF : 4 Pages
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BCP56T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1000
TJ = 125°C
TJ = 25°C
100
TJ = − 55°C
10
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1000
100
10
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain − Bandwidth Product
80
60
TJ = 25°C
40
Cibo
20
10
8.0
6.0
4.0
0.1 0.2
Cobo
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
50 100
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
1.0
0.8
0.6
IC = 10 mA
50
mA
100 mA
0.4
TJ = 25°C
250 mA 500 mA
0.2
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA)
Figure 5. Collector Saturation Region
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