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BCP5616T1 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
BCP5616T1 MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT ON-Semiconductor
ON Semiconductor ON-Semiconductor
BCP5616T1 Datasheet PDF : 4 Pages
1 2 3 4
BCP56T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
100
Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
100
nAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
10
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
All Part Types
BCP56T1
BCP56-10T1
BCP56-16T1
All Types
hFE
25
40
250
63
160
100
250
25
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.5
Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
fT
130
MHz
ORDERING INFORMATION
Device
Marking
Package
Shipping
BCP56T1
BH
SOT−223
1000 / Tape & Reel
BCP56T3
BH
SOT−223
4000 / Tape & Reel
BCP56−10T1
BH−10
SOT−223
1000 / Tape & Reel
BCP56−16T1
SOT−223
1000 / Tape & Reel
BCP56−16T1G
BH−16
SOT−223
(Pb−Free)
1000 / Tape & Reel
BCP56−16T3
SOT−223
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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