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BCP56-10,115 View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
BCP56-10,115 80 V, 1 A NPN medium power transistors NXP
NXP Semiconductors. NXP
BCP56-10,115 Datasheet PDF : 15 Pages
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NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
103
Zth(j-a)
(K/W)
duty cycle =
102
1.0
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
0
1
006aaa816
101
105
104
103
102
101
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
-
-
100 nA
-
-
10 µA
-
-
100 nA
hFE
DC current gain
VCEsat
DC current gain
hFE selection -10
hFE selection -16
collector-emitter
saturation voltage
VCE = 2 V
IC = 5 mA
63 -
IC = 150 mA
63 -
IC = 500 mA
[1] 40
-
VCE = 2 V
IC = 150 mA
63 -
IC = 150 mA
100 -
IC = 500 mA; IB = 50 mA [1] -
-
-
250
-
160
250
500 mV
VBE
base-emitter voltage VCE = 2 V; IC = 500 mA [1] -
-
1
V
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
6
-
pF
f = 1 MHz
fT
transition frequency VCE = 5 V; IC = 50 mA;
100 180 -
MHz
f = 100 MHz
[1] Pulse test: tp 300 µs; δ = 0.02.
BC639_BCP56_BCX56_8
Product data sheet
Rev. 08 — 22 June 2007
© NXP B.V. 2007. All rights reserved.
9 of 15
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