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BCP53T3 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
BCP53T3
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BCP53T3 Datasheet PDF : 0 Pages
BCP53T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0)
V(BR)CBO
–100
Vdc
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–80
Vdc
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) V(BR)CER
–100
Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector-Base Cutoff Current (VCB = –30 Vdc, IE = 0)
ICBO
–100
nAdc
Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0)
IEBO
–10
µAdc
ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –2.0 Vdc) All Part Types
(IC = –150 mAdc, VCE = –2.0 Vdc)
BCP53T1
BCP53–10T1
BCP53–16T1
(IC = –500 mAdc, VCE = –2.0 Vdc) All Part Types
hFE
25
40
250
63
160
100
250
25
Collector-Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base-Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
DYNAMIC CHARACTERISTICS
–0.5
Vdc
–1.0
Vdc
Current-Gain – Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 35 MHz)
fT
50
MHz
500
VCE = 2 V
TYPICAL ELECTRICAL CHARACTERISTICS
500
300
200
VCE = 2 V
100
100
50
50
20
1
3 5 10
30 50 100
300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1
0.8
V(BE)sat @ IC/IB = 10
0.6
V(BE)on @ VCE = 2 V
0.4
0.2
V(CE)sat @ IC/IB = 10
01
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Saturation and “ON” Voltages
20
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain Bandwidth Product
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Cib
Cob
2 4 6 8 10 12 14 16 18 20
V, VOLTAGE (VOLTS)
Figure 4. Capacitances
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