BCP54-10 View Datasheet(PDF) - NXP Semiconductors.
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NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
tp ≤ 1 ms
peak base current
single pulse;
-
tp ≤ 1 ms
total power dissipation
Tamb ≤ 25 °C
BC635
[1] -
BCP54
[1] -
[2] -
BCX54
[1] -
[2] -
[3] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
45
V
45
V
5
V
1
A
1.5
A
0.2
A
0.83 W
0.64 W
0.96 W
0.5
W
0.85 W
1.25 W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BC635_BCP54_BCX54_7
Product data sheet
Rev. 07 — 4 June 2007
© NXP B.V. 2007. All rights reserved.
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